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Identification of DRAM sense amplifier imbalance using hot carrier evaluation

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4 Author(s)
Aur, S. ; Texas Instrum. Inc., Dallas, TX, USA ; Duvvury, C. ; McAdams, H. ; Perrin, C.

The authors present a study of the causes of inherent imbalance in a DRAM sense amplifier. Refresh time measurements are used to assess this imbalance before and after hot carrier stress. The stress effect on the sense amplitude is compared to simulations using a circuit hot electron effect simulator. This analysis shows that the latch transistor threshold voltage variation, rather than layout capacitance difference, is the cause for the original imbalance

Published in:

VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on

Date of Conference:

22-24 May 1991

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