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Determination of MOSFET's channel doping profile right up to SiO 2/Si interface

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2 Author(s)
Pole-Shang Lin ; ERSO/ITRI, Hsinchu, Taiwan ; Chih-Hsien Wang

The threshold-voltage fitting method is proposed to determine the channel doping profile of both n-channel and counter-implantation p-channel MOSFET's. The doping profile in the region near SiO2/Si interface, of depth less than the extrinsic Debye length, can be determined. The accuracy of the developed method has been tested through both the numerical simulation results and the experimental data. Quite good agreement has been obtained

Published in:

VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on

Date of Conference:

22-24 May 1991

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