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Characterization of thin oxide damage during aluminum etching and photoresist ashing processes

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5 Author(s)
Shin, H. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; King, C.-C. ; Moazzami, R. ; Horiuchi, T.
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Plasma-induced damage can be simulated and modeled as damage produced by constant voltage electrical stress. The voltage produced by plasma process increases with the `antenna' size of the device structure. Photoresist ashing is capable of degrading oxide integrity even more rapidly than Al etching. However, the stress voltage produced during ashing exhibits a large spread and is randomly distributed across the wafer. CV measurement is shown to be a more sensitive technique for characterizing plasma-etching induced damage than oxide breakdown

Published in:

VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on

Date of Conference:

22-24 May 1991