The improvement of I-V characteristics curve fitting by the modification of SPICE model-level 3

The semi-empirical SPICE model-level 3 is obviously improved by treating the effective electrical channel length L/sub eff/ and source-drain external resistance R/sub SD/ as bias-dependent in the lightly-doped-drain MOSFET devices. The universal surface mobility model: mu /sub s/= mu /sub 0//(1+ theta (V/sub GS/-V/sub TH/)) is proved again, i.e., the parameters theta and mu /sub 0/ are the same for different channel length devices. On the other hand, the saturation velocity upsilon /sub s/ is treated as an empirical parameter. Through these improvements: bias-dependent L/sub eff/, R/sub SD/, and remodeled upsilon /sub s/, the model becomes more suitable to fit the I-V characteristics of devices with large range of device channel length using a single set of device parameters.<
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