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The improvement of I-V characteristics curve fitting by the modification of SPICE model-level 3

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1 Author(s)
Chung-Zen Chen ; Ind. Technol. Res. Inst., Electron. Res. & Service Organ., Hsin-Chu

The semi-empirical SPICE model-level 3 is obviously improved by treating the effective electrical channel length Leff and source-drain external resistance RSD as bias-dependent in the lightly-doped-drain MOSFET devices. The universal surface mobility model: μs0/(1+θ(VGS-VTH )) is proved again, i.e., the parameters θ and μ0 are the same for different channel length devices. On the other hand, the saturation velocity υs is treated as an empirical parameter. Through these improvements: bias-dependent Leff, RSD, and remodeled υs, the model becomes more suitable to fit the I-V characteristics of devices with large range of device channel length using a single set of device parameters

Published in:

VLSI Technology, Systems, and Applications, 1991. Proceedings of Technical Papers, 1991 International Symposium on

Date of Conference:

22-24 May 1991