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Modeling the gate I/V characteristic of a GaAs MESFET for Volterra-series analysis

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2 Author(s)
Maas, S.A. ; Aerosp. Corp., Los Angeles, CA ; Crosmun, A.

The authors show that the Taylor-series coefficients of a FET's gate/drain I/V characteristic, which is used to model this nonlinearity for Volterra-series analysis, can be derived from low-frequency RF measurements of harmonic output levels. The method circumvents many of the problems encountered in using DC measurements to characterize this nonlinearity. This method was used to determine the incremental gate I/V characteristic of a packaged Aventek AT10650-5 MESFET biased at a drain voltage of 3 V and drain current of 20 mA. The FET's transconductance was measured at DC, and its small-signal equivalent circuit (including the package parasitics) was determined by adjusting its circuit element values until good agreement between calculated and measured S parameters was obtained. The FET was then installed in a low-frequency test fixture. Excellent results were obtained

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:37 ,  Issue: 7 )