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Carrier-dependent nonlinearities and modulation in an InGaAs SQW waveguide

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3 Author(s)
Ehrlich, J.E. ; Dept. of Phys., Heriot-Watt Univ., Riccarton, Edinburgh, UK ; Neilson, D.T. ; Walker, A.C.

The authors report measurements of optically induced carrier-dependent refractive index changes and their saturation in an InGaAs single quantum well centered within a linear multiple quantum well guided-wave Fabry-Perot resonator using diode laser sources. A low-excitation nonlinear refractive cross-section, σn=-1×10-19 cm3, was deduced for probe wavelengths near the TM (transverse magnetic) absorption edge, falling only to σn=-3.1×10-20 cm3, at over 0.16 μm from the band edge. For an incident irradiance of 18 kW/cm 2, refractive index changes in the InGaAs quantum well as large as -0.16 were deduced near the absorption edge, while the index change at a wavelength 0.16 μm from the absorption edge was -0.055. This large off-resonant index change is attributed to an enhanced free-carrier contribution within a 2D system

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Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 8 )