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On the design and performance of a 6-18 GHz three-tier matrix amplifier

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2 Author(s)
Niclas, K.B. ; Watkins-Johnson Co., Palo Alto, CA, USA ; Pereira, R.R.

A 3×3 matrix amplifier for the 6-18-GHz frequency band has been developed. Using MESFETs fabricated on VPE (vapor-phase epitaxial) material, gains of G=23.5±0.5 dB with a maximum reflection loss of RL=-10 dB were obtained from 5.2 to 18.7 GHz. Gain improvement to G=29.1±1.1 dB at a worst-case reflection loss of RL=-7.5 dB between 4.6 and 18.3 GHz when MBE (molecular-beam epitaxial) material was used for the MESFETs. In addition to the experimental results, important design considerations, especially in regard to the termination impedances of the idle ports, are discussed

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:37 ,  Issue: 7 )