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Low-thermal-budget process modeling with the PREDICT computer program

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1 Author(s)
Fair, R.B. ; Microelectron. Center of North Carolina, Research Triangle Park, NC, USA

Low-thermal-budget processing models have been developed that are applicable to a broad range of ion-implantation and annealing conditions. The cases discussed here include low-temperature furnace annealing of B implants, preamorphization or postamorphization using Si + or Ge+ implants, and rapid thermal annealing of low-dose and high-dose implants. Annihilation of implant damage is accounted for through activated annealing models. Damage type and location in depth are important in understanding enhanced or retarded diffusion of dopants. Damage and diffusion models have been incorporated in the PREDICT program, and example calculations are compared with measurements

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Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 3 )