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Successive charging/discharging of gate oxides in SOI MOSFET's by sequential hot-electron stressing of front/back channel

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4 Author(s)
A. Zaleski ; Dept. of Electr. Comput. Eng., George Mason Univ., Fairfax, VA, USA ; D. E. Ioannou ; G. J. Campisi ; H. L. Hughes

Hot-hole injection into the opposite channel of silicon-on-insulator (SOI) MOSFETs under hot-electron stress is reported. Sequential front/back-channel hot-electron stressing results in successive hot-electron/-hole injection, causing the threshold voltage to increase and decrease accordingly. This ability to inject hot holes into the opposite gate oxide can be used as an additional tool for studying the degradation mechanisms. Furthermore, it can be explored for possible use in designing SOI flash memory cells with back-channel-based erasing schemes.<>

Published in:

IEEE Electron Device Letters  (Volume:14 ,  Issue: 9 )