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SiGe heterojunction bipolar transistors with thin alpha -Si emitters

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4 Author(s)
Tang, Z.R. ; Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada ; Kamins, T. ; Li, P. ; Salama, C.A.T.

A SiGe-base heterojunction bipolar transistor with an extremely thin n hydrogenated amorphous Si ( alpha -Si:H) emitter is proposed and characterized. The structure results in enhanced emitter injection efficiency, current gain, and frequency performance. The fabricated devices exhibited maximum current gains of 100 and Early voltages of 55 V. The unity current gain cutoff frequency (f/sub T/) for a device with an emitter size of 2 mu m*4 mu m was 8.5 GHz.<>

Published in:

Electron Device Letters, IEEE  (Volume:14 ,  Issue: 9 )