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Room-temperature operation of a resonant-tunneling hot-electron transistor based integrated circuit

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4 Author(s)
Moise, T.S. ; Texas Instrum. Inc., Dallas, TX, USA ; Seabaugh, Alan C. ; Beam, E.A. ; Randall, John N.

The first resonant-tunneling hot-electron transistor (RHET) EXCLUSIVE-NOR integrated circuit that operates at room temperature is demonstrated. The XNOR circuit consisting of a single resonant-tunneling transistor and four thin-film resistors, exhibits a 500-mV output voltage swing between the high- and low-logic levels when biased with a 1.8-V supply. The transistor, which features a novel InGaP collector barrier, has a peak current density of 4*10/sup 4/ A-cm/sup -2/, a common-base transfer coefficient of 0.9, and a peak-to-valley current ratio of 10:1 when operated in a common-emitter mode.<>

Published in:

Electron Device Letters, IEEE  (Volume:14 ,  Issue: 9 )

Date of Publication:

Sept. 1993

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