Cart (Loading....) | Create Account
Close category search window
 

Characteristics of sub-100-nm p/sup +//n junctions fabricated by plasma immersion ion implantation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Jones, Erin C. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Cheung, Nathan W.

Plasma immersion ion implantation (PIII) is an efficient method for fabricating high-quality p/sup +//n diodes with junction depths below 100 nm. SiF/sub 4/ is implanted to create an amorphous Si layer to retard B channeling and diffusion, and then BF/sub 3/ is implanted. Ultrashallow p/sup +//n junctions are formed by annealing at 1060 degrees C for 10 s. With the shallow implants, no extended defects are observed in device or peripheral areas due to rapid outdiffusion of fluorine. Diode electrical characteristics yield forward ideality factor of 1.05-1.06 and leakage current density below 2 nA/cm/sup 2/ in the diode bulk. Minority-carrier lifetime below the junction is greater than 250 mu s.<>

Published in:

Electron Device Letters, IEEE  (Volume:14 ,  Issue: 9 )

Date of Publication:

Sept. 1993

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.