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High-performance SiGe epitaxial base bipolar transistors produced by a reduced-pressure CVD reactor

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10 Author(s)
M. Hong ; Motorola Inc., Mesa, AZ, USA ; E. de Fresart ; J. Steele ; A. Zlotnicka
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High-performance Si and SiGe epitaxial base bipolar transistors have been fabricated using a commercially available, reduced pressure, epitaxial reactor. The SiGe devices exhibit exceptional Early voltages in the range of 400-500 V, and an f/sub T/ of 31 GHz with a BV/sub CEO/ of 7.6 V and BV/sub CBO/ of 16 V. These results demonstrate that SiGe has potential as a commercially viable technology for analog, digital, and mixed-signal applications.<>

Published in:

IEEE Electron Device Letters  (Volume:14 ,  Issue: 9 )