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Large-signal characterization of unipolar III-V semiconductor diodes at microwave and millimeter-wave frequencies

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2 Author(s)
Tait, G.B. ; US Naval Res. Lab., Washington, DC, USA ; Krowne, C.M.

Large-signal characterizations are performed for n-GaAs and n-InP diodes operating in oscillator circuits at microwave and millimeter-wave frequencies. A CAD approach, consisting of a physical device model and an efficient numerical solution method, is used to analyze several sample diode structures with different material properties and geometries. The large-signal simulation results are reported for X -band and Q-band diodes, and are found to correlate well with results obtained from both laboratory experiment and large-scale ensemble Monte Carlo calculations

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Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 2 )