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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:35 Issue:2 Help

Determination of Si-SiO2 interface recombination parameters using a gate-controlled point-junction diode under illumination

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3 Author(s)
Girisch, R.B.M. ; ESAT Lab., Katholieke Univ. Leuven, Heverlee, Belgium ; Mertens, R.P. ; De Keersmaecker, R.F.

A novel method is presented to determine Si-SiO2 interface recombination parameters. The device used is a polysilicon-oxide-semiconductor capacitor with a microscale central junction (a gate-controlled point-junction diode). Data analysis has been performed using a numerical scheme to find a quasi-exact solution for the current combining at the interface. It was found that the interface recombination parameters depend only weakly on trap energy in a wide range around midgap. The cross-section for capturing electrons was found to exceed the cross-section for capturing holes by a factor of 102 to 103

Published in:
Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 2 )

Date of Publication: Feb 1988

Page(s):
203 - 222
ISSN :
0018-9383
INSPEC Accession Number:
3109819
Digital Object Identifier :
10.1109/16.2441
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Feb 1988
Sponsored by :
IEEE Electron Devices Society

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