Referenced Items are not available for this document.
A SRAM cell that consists of a bipolar transistor and an MOS transistor is proposed. The cell's principle of operation is based on the reverse base current (RBC) of a bipolar transistor. It has been fabricated by conventional BiCMOS technology, using double-poly Si. A cell size of 8.58 μm2 is realized in a 1.0-μm ground rule. The mechanism and characteristics of this cell are discussed
Published in:
Electron Devices, IEEE Transactions on
(Volume:36
,
Issue:
6
)
Date of Publication: Jun 1989
- Page(s):
- 1215 - 1217
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 3432771
- Digital Object Identifier :
- 10.1109/16.24372
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jun 1989
- Sponsored by :
- IEEE Electron Devices Society
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