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A new static memory cell based on the reverse base current effect of bipolar transistors

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6 Author(s)

A SRAM cell that consists of a bipolar transistor and an MOS transistor is proposed. The cell's principle of operation is based on the reverse base current (RBC) of a bipolar transistor. It has been fabricated by conventional BiCMOS technology, using double-poly Si. A cell size of 8.58 μm2 is realized in a 1.0-μm ground rule. The mechanism and characteristics of this cell are discussed

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Electron Devices, IEEE Transactions on  (Volume:36 ,  Issue: 6 )