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Charge control, DC, and RF performance of a 0.35-μm pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistor

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7 Author(s)
Nguyen, L.D. ; Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA ; Schaff, William J. ; Tasker, P.J. ; Lepore, A.N.
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The authors describe a study of charge control in conjunction with DC and RF performance of 0.35-μm-gate-length pseudomorphic AlGaAs/InGaAs MODFETs. Using C-V measurements, they estimate that a two-dimensional electron gas (2DEG) with density as high as 1.0×1012 cm-2 can be accumulated in the InGaAs channel at 77 K before the gate begins to modulate parasitic charges in the AlGaAs. This improvement in charge control of about 10-30% over a typical AlGaAs/GaAs MODFET may partially be responsible for the superior DC and RF performance of the AlGaAs/InGaAs MODFET. At room temperature, the devices give a maximum DC voltage gain g m/gd of 32 and a current gain cutoff frequency fT of 46 GHz. These results are state of the art for MODFETs of similar gate length

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Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 2 )