Referenced Items are not available for this document.
The resistance for a two-layer structure with planar contacts is derived, with both the contacts and the region between the contacts modeled as transmission lines. Magnetic field effects are included, yielding additional information on mobilities and carrier concentrations. The theory can be fitted to the usual resistance-versus-contact-separation data as a function of magnetic field strength. Fitted parameters include mobilities and carrier concentrations in each layer, both under the contact and in the bulk material between the contacts, as well as specific contact resistivities for the contact barriers. Experimental results are obtained for an AlGaAs/InGaAs modulation-doped FET structure
Published in:
Electron Devices, IEEE Transactions on
(Volume:35
,
Issue:
2
)
Date of Publication: Feb 1988
- Page(s):
- 133 - 138
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 3109810
- Digital Object Identifier :
- 10.1109/16.2431
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Feb 1988
- Sponsored by :
- IEEE Electron Devices Society
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