Referenced Items are not available for this document.
The authors discuss a band-to-band tunneling mechanism in the trench transistor cell (TTC), which is used in Texas Instruments' 4-Mbit DRAM. This effect should be operative in the class of trench cells in which the charge is stored inside the trench and the substrate forms a capacitor plate. This effect does not compromise the functionality of the cell; in fact, it has the potential of improving the long-term reliability of the cell by preventing electrical overstress of the trench capacitor oxide
Published in:
Electron Devices, IEEE Transactions on
(Volume:35
,
Issue:
1
)
Date of Publication: Jan 1988
- Page(s):
- 108 - 116
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 3109806
- Digital Object Identifier :
- 10.1109/16.2425
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jan 1988
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
