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Low power consumption InAlAs-InGaAs-InP HBT SPDT PIN diode X-band switch

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6 Author(s)

Results for the first monolithic single-pole, double-throw (SPDT) X-band PIN diode switch fabricated with InAlAs-InGaAs HBTs lattice matched to InP are reported. The switch achieves performance similar to that of a GaAs implementation but with half the power consumption. The insertion loss is 0.89 dB and the off-isolation is >35 dB at 10 GHz. The IP3 is 29.6 dBm and the total power consumption is 10.2 mW. Monolithic integration of PIN diodes with an InP-based HBT process provides monolithic switch functions for use in microwave and millimeter-wave communication systems.<>

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:3 ,  Issue: 10 )

Date of Publication:

Oct. 1993

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