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A monolithic 75-110 GHz balanced InP-based HEMT amplifier

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4 Author(s)
Huei Wang ; Electron. Technol. Div., Redondo Beach, CA, USA ; Lai, R. ; Chen, S.T. ; Berenz, J.

A monolithic microwave integrated circuit (MMIC) balanced amplifier covering the entire W-band (75-110 GHz) has been developed using 0.1-mm pseudomorphic InAlAs-InGaAs-InP HEMT technology. This MMIC amplifier demonstrated first pass success with a measured gain of 23+or-3 dB and good return loss from 75 to 110 GHz. The noise figure of this amplifier is about 6 dB around 94 GHz. This is believed to be the best reported broadband and high-gain performance of monolithic amplifiers covering the entire W-band.<>

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:3 ,  Issue: 10 )