Referenced Items are not available for this document.
High-yield W-band monolithic microwave integrated circuits (MMICs), namely, a three-stage low-noise amplifier (LNA) and a monolithic image rejection downconverter (IRD), are discussed. The LNA is used as the front end followed by an image rejection mixer (IRM). These MMICs were fabricated in the 0.1- mu m AlGaAs-InGaAs-GaAs HEMT production line. The LNA demonstrated a typical 17-dB gain and 4.5-5.5-dB noise figure at 94 GHz. The complete monolithic IRD has a measured conversion gain of 7-9 dB with a single-side-band noise figure of 6 dB when downconverting a 93-95-GHz RF signal to 50-500 MHz. The downconversion requires an LO power of 9 dBm. The development of these MMICs shows the increasing maturity of GaAs-based HEMT MMIC technology at W-band.<
Published in:
Microwave and Guided Wave Letters, IEEE
(Volume:3
,
Issue:
8
)
Date of Publication: Aug. 1993
- Page(s):
- 281 - 283
- ISSN :
- 1051-8207
- INSPEC Accession Number:
- 4522508
- Digital Object Identifier :
- 10.1109/75.242214
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Aug. 1993
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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