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Mechanism of kink effect related to negative photoconductivity in AlGaAs/GaAs HEMTs

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4 Author(s)
Thomasian, A. ; GEC Hirst Res. Centre, Wembley, UK ; Saunders, N.L. ; Hipwood, L.G. ; Rezazadeh, A.A.

The observation and proposed mechanism for negative photoconductivity leading to the kink effect in the output DC characteristics of AlGaAs/GaAs HEMTs is reported. Negative photoconductivity is the result of trapping electrons at the surface, and the kink is attributed to the tunnelling of these trapped electrons back into the n-AlGaAs layer, at a constant gate-to-drain bias.

Published in:

Electronics Letters  (Volume:25 ,  Issue: 11 )

Date of Publication:

25 May 1989

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