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Computer-aided design and scaling of deep submicron CMOS

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2 Author(s)
Specks, J.W. ; Inst. fuer Theor. Elektrotech., Tech. Univ. of Aachen, Germany ; Engl, W.L.

A simulation tool-box and its applications to computer-aided design and scaling of deep-submicron CMOS are presented. The simulation tools are grouped around a mixed level approach and cover a wide range of applications. Due to the mixed-level approach, fast table models and accurate numerical models can be combined simultaneously in a single circuit simulation. Device and circuit characteristics can be accurately represented as functions of technical parameters, even in the deep-submicron region. The application of the toolbox is demonstrated for some examples from the fields of device design and SRAM scaling. The gate-drain overlap and junction depth of 0.4-μm devices are optimized with respect to circuit performance and device degradation. Different drain structures and supply voltages for 0.25-μm devices are compared. Scaling of CMOS SRAM's from 0.7 to 0.4 μm and finally to 0.25-μm gate length is simulated. The relevance of device structure, design rules, and supply voltage for speed, power dissipation, and chip area are pointed out and their influence on circuit performance predicted

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:12 ,  Issue: 9 )