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A hybrid silicon carbide differential amplifier for 350°C operation

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4 Author(s)
Tomana, M. ; Dept. of Electr. Eng., Auburn Univ., AL, USA ; Johnson, R.W. ; Jaeger, R.C. ; Dillard, W.C.

An operational amplifier has been designed, fabricated, and tested at 350°C using silicon carbide MESFET pairs and thick-film hybrid technology. The amplifier was successfully tested over the temperature range of 25-350°C. The gain of the amplifier was greater than 60 dB, the common-mode rejection ratio was greater than 55 dB, and the offset voltage varied from 139 to 159 mV over the entire temperature range. The results demonstrate the feasibility of high-temperature circuit design and assembly using this approach

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Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:16 ,  Issue: 5 )