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Performance analysis of multilayer interconnections for megabit static random access memory chip

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2 Author(s)
Rayapati, V.N. ; Dept. of Electr. Eng., Montreal Univ., Que., Canada ; Kaminska, B.

Interconnections problems in the megabit static random access memory (SRAM) chip are studied. A multilayer interconnect capacitance model is developed, and effects of interconnection on SRAM device performance parameters, such as propagation delay, speed, power consumption, and noise characteristics, are analyzed. A case study of 1-Mb SRAM chip interconnection is discussed. A multilayer interconnect approach is proposed to overcome on-chip interconnection difficulties. By implementing a double-layer interconnect approach, the wire length and chip size were reduced to 69% and 58%, respectively. Maximum access time of 30.8 ns with 1 W at 100°C and wafer yield as high as 10% was achieved

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Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:16 ,  Issue: 5 )