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Normal incidence GaAs/AlGaAs multiple-quantum-well polarization modulator using an induced uniaxial strain

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6 Author(s)
Pamulapati, J. ; US Army Res. Lab., Fort Monmouth, NJ ; Shen, H. ; Wraback, M. ; Taysing-Lara, M.
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Summary form only given. A demonstration of a novel polarization modulator with light incident normal to the surface of the modulator is reported. The layered pattern in a multiple quantum well (MQW) breaks the full cubic symmetry of the host materials. These structures, though, reserve a fourfold rotation symmetry about the growth axis normal to (100) oriented substrates. A uniaxial stress applied in the plane of the structure further reduces this rotation symmetry, mixing the heavy and light hole bands and creating an anisotropy in the in-plane components of the dielectric function, thus allowing the use of this device as a polarization modulator with a contrast ratio ~55:1 with a 5 V applied bias. A p-i-n structure grown on (100) GaAs was used for the modulator. The intrinsic region consists of a 100-period, 150-Å GaAs/50-Å Al0.1Ga0.9As MQW

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Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 11 )