Cart (Loading....) | Create Account
Close category search window
 

Characterization and high-speed digital application of GaAs MESFETs on substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Onozawa, S. ; Oki ELectr. Ind. Co. Ltd., Tokyo ; Yamamoto, N. ; Kimura, T. ; Sano, Y.
more authors

Summary form only given. The authors optimized the device structure to suppress the short channel effect due to the residual stress in GaAs/Si substrates and improved the microscopic uniformity. The residual-stress problem was solved by introducing a p-layer (C+ : 140 keV) buried under the n-type channel (Si+: 20 keV) in the n+ self-alignment technique with refractory W-Al gate. The authors then evaluated the microscopic uniformity of the device on GaAs/Si using 60-μm×60-μm-pitch FET arrays, and found that it is improved by introducing the p-layer. To evaluate the dynamic characteristics, a direct-coupled FET logic (DCFL) ring oscillator was fabricated using a 0.3-μm-gate MESFET on the GaAs/Si substrate. The propagation delay was as small as 19.9 ps/gate at a supply voltage of 2 V

Published in:

Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 11 )

Date of Publication:

Nov 1993

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.