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Numerical simulations of on and off state characteristics of polysilicon thin film transistors

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4 Author(s)
Hack, M. ; Xerox Palo Alto Res. Center, CA ; Wu, I.-W. ; Lewis, A.G. ; King, T.J.

Summary form only given. Good agreement between numerical simulations and experimental data on the electrical characteristics of polycrystalline silicon (poly-Si) thin film transistors (TFTs) is shown. The field-effect mobility, threshold voltage, leakage current, and kink effect are examined. It is shown how the on-state performance of these devices can be modeled using an effective medium approach. Leakage currents are modeled by adding a single tunneling trap with a temperature-independent tunneling mechanism. The bias, temperature, and statistical behavior of leakage currents in poly-Si TFTs have been successfully simulated

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Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 11 )