Cart (Loading....) | Create Account
Close category search window
 

Numerical simulations of on and off state characteristics of polysilicon thin film transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hack, M. ; Xerox Palo Alto Res. Center, CA ; Wu, I.-W. ; Lewis, A.G. ; King, T.J.

Summary form only given. Good agreement between numerical simulations and experimental data on the electrical characteristics of polycrystalline silicon (poly-Si) thin film transistors (TFTs) is shown. The field-effect mobility, threshold voltage, leakage current, and kink effect are examined. It is shown how the on-state performance of these devices can be modeled using an effective medium approach. Leakage currents are modeled by adding a single tunneling trap with a temperature-independent tunneling mechanism. The bias, temperature, and statistical behavior of leakage currents in poly-Si TFTs have been successfully simulated

Published in:

Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 11 )

Date of Publication:

Nov 1993

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.