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A 0.5-μm EEPROM cell using poly-Si TFT technology

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6 Author(s)
Sato, A. ; Fujitsu Labs. Ltd., Atsugi ; Momiyama, Y. ; Nara, Y. ; Sugii, T.
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Summary form only given. A 0.5-μm EEPROM (electrically erasable programmable read only memory) cell using poly-Si thin-film transistor (TFT) technology is reported. 10-μs programming time and a good endurance over 104 program/erase cycles were obtained. These device characteristics are promising for low-cost and high-density EEPROMs

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Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 11 )