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High-speed, high breakdown voltage InP/InGaAs double-heterojunction bipolar transistors grown by MOMBE

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2 Author(s)
Chau, H.-F. ; Texas Instrum. Inc., Dallas, TX ; Beam, E.A., III

Summary form only given. The authors report very-high-performance InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with low output conductance and high breakdown voltage of at least 5.5 V at high current densities, with measured BVCEO and BVCBO of >7.5 V and 10.6 V, respectively. The 11 μm2 devices exhibited fT of 134 GHz and fmax of 113 GHz at VCE=1.57 V and IC=16.22 mA. The epitaxial structure was grown by metal-organic molecular beam epitaxy (MOMBE) using tertiarybutylarsine and tertiarybutylphosphine as the group-V sources

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Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 11 )