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Low threshold, electrically injected InGaAsP (1.3 μm) vertical cavity lasers on GaAs substrates

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9 Author(s)
Dudley, J.J. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA ; Babic, D.I. ; Mirin, R. ; Yang, L.
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Summary form only given. Electrically injected long-wavelength vertical cavity lasers (VCLs) employing InGaAsP (1.3 μm) active regions fused to GaAs-AlAs mirrors on GaAs substrates are demonstrated. The lasers operate pulsed at room temperature (300 K) with a threshold current of 9 mA and a threshold current density of 9.5 kA/cm2. These devices operate CW (continuous wave) at temperatures as high as 230 K; the CW threshold current at 230 K is 3.6 mA. The use of the GaAs-AlAs mirror makes the device more mechanically robust, improving the thermal conductivity and reducing problems with nonuniform injection

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Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 11 )