Referenced Items are not available for this document.
Summary form only given. Electrically injected long-wavelength vertical cavity lasers (VCLs) employing InGaAsP (1.3 μm) active regions fused to GaAs-AlAs mirrors on GaAs substrates are demonstrated. The lasers operate pulsed at room temperature (300 K) with a threshold current of 9 mA and a threshold current density of 9.5 kA/cm2. These devices operate CW (continuous wave) at temperatures as high as 230 K; the CW threshold current at 230 K is 3.6 mA. The use of the GaAs-AlAs mirror makes the device more mechanically robust, improving the thermal conductivity and reducing problems with nonuniform injection
Published in:
Electron Devices, IEEE Transactions on
(Volume:40
,
Issue:
11
)
Date of Publication: Nov 1993
- Page(s):
- 2119 - 2120
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 4604403
- Digital Object Identifier :
- 10.1109/16.239794
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov 1993
- Sponsored by :
- IEEE Electron Devices Society
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