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Curved and tapered waveguide mode-locked InGaAs/AlGaAs semiconductor lasers fabricated by impurity induced disordering

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4 Author(s)
Helkey, R. ; California Univ., Santa Barbara, CA ; Zou, W.-X. ; Mar, A. ; Young, D.B.

Summary form only given. Modelocking using curved waveguide devices for low facet reflectivity and using tapered waveguide devices for high output power has been demonstrated. Strong suppression of reflection-seeded secondary pulses was observed for curved waveguides, and increased output power for tapered waveguides. InGaAs/AlGaAs quantum-well semiconductor diode lasers were fabricated using impurity induced disordering. The waveguide has a linear taper from 2.5 μm to 7.5 μm width over a 150 μm distance. The modelocked output pulse energy was increased to 4.1 pJ, compared to 1.8 pJ for a similar 2.5 μm waveguide untapered device

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Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 11 )