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Temperature and scaling behavior of strained-Si N-MOSFET's

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3 Author(s)
J. Welser ; Solid State Electron. Lab., Stanford, CA ; J. L. Hoyt ; J. F. Gibbons

Summary form only given. The device characteristics of N-MOSFETs fabricated in strained-Si have been investigated as a function of temperature and gate length. It is found that the low field mobility is enhanced compared to Si control devices at temperatures down at 20 K. For moderate fields, gm is enhanced at all measured temperatures, for effective gate lengths down to 0.8 μm (L drawn=1.5 μm). At high power density, however, the devices exhibit a negative differential output resistance. The thermal conductivity of the relaxed Si1-xGex buffer layers is estimated by fitting polysilicon resistor characteristics to a first order model

Published in:

IEEE Transactions on Electron Devices  (Volume:40 ,  Issue: 11 )