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An overview of visible light emitting diode (LED) development and the potential for AlInGaP devices

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1 Author(s)
Craford, M.G. ; Hewlett Packard Optoelectronics Div., San Jose, CA

Summary form only given. Recent developments in light-emitting diode (LED) materials growth and device properties are considered. The brightness of LEDs has increased in recent years, permitting new applications. Double heterostructure AlGaAs red LEDs on transparent `substrates' are now commercially available for outdoor displays and signaling applications. Recently, AlInGaP LEDs grown by metalorganic chemical vapor disposition (MOCVD) have exhibited record performance in the yellow and red-orange spectral regions. External quantum efficiencies of greater than 5% and luminous performance as high as 20 lm/W at 590 nm have been reported. This performance is higher than that of conventional incandescent bulbs

Published in:

Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 11 )

Date of Publication:

Nov 1993

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