Scheduled System Maintenance:
On May 6th, single article purchases and IEEE account management will be unavailable from 8:00 AM - 5:00 PM ET (12:00 - 21:00 UTC). We apologize for the inconvenience.
By Topic

Improved junction capacitance model for the GaAs MESFET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Rodriguez-Tellez, J. ; Dept. of Electron. & Electr. Eng., Bradford Univ., UK ; Mezher, K. ; Al-Daas, M.

An empirical equation for simulating the bias dependency of the junction capacitances of the GaAs MESFET is presented and compared with existing techniques. It provides increased accuracy over a wide range of silicon and GaAs devices for microwave circuit design applications and up to 72% savings in CPU execution speed over existing techniques

Published in:

Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 11 )