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Browse Journals & Magazines > Electron Devices, IEEE Transa ...> Volume:40 Issue:11 Help

Drift hole mobility in strained and unstrained doped Si1-x Gex alloys

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6 Author(s)
Manku, T. ; Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada ; McGregor, J.M. ; Nathan, A. ; Roulston, D.J.
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Results of the drift hole mobility in strained and unstrained SiGe alloys are reported for Ge fractions varying from 0 to 30% and doping levels of 1015-1019 cm-3. The mobilities are calculated taking into account acoustic, optical, alloy, and ionized-impurity scattering. The mobilities are then compared with experimental results for a boron doping concentration of 2×1019 cm-3. Good agreement between experimental and theoretical values is obtained. The results show an increase in the mobility relative to that of silicon

Published in:
Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 11 )

Date of Publication: Nov 1993

Page(s):
1990 - 1996
ISSN :
0018-9383
INSPEC Accession Number:
4598688
Digital Object Identifier :
10.1109/16.239739
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Nov 1993
Sponsored by :
IEEE Electron Devices Society

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