By Topic

Bottom-gate poly-Si thin film transistors using XeCl excimer laser annealing and ion doping techniques

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
M. Furuta ; Matsushita Electr. Ind. Co. Ltd., Osaka, Japan ; T. Kawamura ; T. Yoshioka ; Y. Miyata

High mobility bottom-gate poly-Si thin film transistors (TFTs) have been successfully fabricated on a hard glass substrate using XeCl excimer laser annealing and ion doping techniques. The authors used an a-Si:H film which is deposited by a plasma-enhanced chemical vapor deposition (PECVD) as a precursor film, and then they crystallized the a-Si film by XeCl excimer laser annealing. The maximum field effect mobility and grain size obtained were 200 cm2/V-s (n-channel), and 250 nm, respectively. The poly-Si TFTs showed excellent transfer characteristics, and an ON/OFF current ratio of over 106 was obtained. Successful control of the threshold voltage within 4 V using an ion doping technique is also demonstrated

Published in:

IEEE Transactions on Electron Devices  (Volume:40 ,  Issue: 11 )