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Browse Journals & Magazines > Microwave Theory and Techniqu ...> Volume:41 Issue:6 Help

Simulations of HEMT DC drain current and 1 to 50 GHz S-parameters as a function of gate bias

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3 Author(s)
Mahon, S.J. ; Sch. of Math., Phys., Comput. & Electron., Macquarie Univ., North Ryde, NSW ; Chivers, M.J. ; Skellern, D.J.

The usefulness over an extended range of a high-electron-mobility transistor (HEMT) model previously validated for a 1-25-GHz S-parameter model is shown. Experimental and simulation results for the DC drain current and 1-50-GHz S-parameters of a pseudomorphic 0.32-μm gate AlGaAs-InGaAs-GaAs HEMT are presented. The model predicts the device's DC current and S-parameters as functions of the applied gate bias with good accuracy. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. As part of the modeling procedure, a value of (1.77±0.07)×105 m-s-1 is found, confirming the results of other research, for the electron velocity in undoped pseudomorphic In0.15Ga0.85As under ≈0.3-μm gates

Published in:
Microwave Theory and Techniques, IEEE Transactions on  (Volume:41 ,  Issue: 6 )

Date of Publication: Jun/Jul 1993

Page(s):
1065 - 1067
ISSN :
0018-9480
INSPEC Accession Number:
4580476
Digital Object Identifier :
10.1109/22.238526
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Jun/Jul 1993
Sponsored by :
IEEE Microwave Theory and Techniques Society

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