By Topic

Cryogenic characteristics of wide-band pseudomorphic HEMT MMIC low-noise amplifiers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Yang, C.C. ; TRW Inc., Redondo Beach, CA, USA ; Nelson, B.L. ; Allen, B.R. ; Jones, W.L.
more authors

Two wideband (8-18-GHz) single-stage MMIC (monolithic microwave integrated circuit) low-noise amplifiers (LNAs) using 0.2-μm T-gate InGaAs pseudomorphic HEMT (high-electron-mobility transistor) technology, designed and fabricated for room temperature operation, were evaluated and compared at cryogenic temperatures below 20 K. One is a balanced design using 3-dB Lange couplers, and the other is a feedback design using a series RLC parallel feedback network. The gain flatness over the 8-18-GHz frequency band was maintained for both amplifiers at room and cyrogenic temperatures, indicating that the topology for wideband designs is insensitive to temperature of operation. As the physical temperature decreased from 297 K to below 20 K, the balanced LNA exhibited an average gain increase of 2 dB and as much as an eightfold reduction of noise temperature to 20 K, while the feedback LNA exhibited an average gain increase of less than 1 dB and an average foufold reduction of noise temperature to 50 K. The negative feedback network of the feedback LNA resulted in less gain increase and less noise temperature reduction at cryogenic temperatures

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:41 ,  Issue: 6 )