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A linear dependence of Fmin on frequency for TET's

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1 Author(s)
Hughes, B. ; Hewlett-Packard Microwave Technol. Div., Santa Rosa, CA, USA

The minimum noise figure of a FET, expressed in decibels, is shown to increase approximately linearly with frequency to frequencies approaching the FET's fmax. This observation is useful for extrapolating noise figures and provides a simple frequency-of-merit

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:41 ,  Issue: 6 )