By Topic

Interferometric measurement of lateral phase profile and thermal lensing in broad-area diode amplifiers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Hall, D.C. ; US Naval Res. Lab., Washington, DC, USA ; Goldberg, L. ; Mehuys, D.

A Mach-Zehnder imaging interferometric is used to directly measure the lateral phase profile in the near field of broad-area semiconductor optical amplifiers with lambda /25 phase resolution, or 0.1 degrees C in temperature. The quadratic thermally induced phase distortion and its equivalent thermal lens focal length are characterized. Anomalous localized phase variations are correlated to thermal bond nonuniformities in devices mounted under nonoptimal conditions. It is demonstrated for an unbiased 600- mu m-wide by 1000- mu m-long amplifier device that a phase uniformity across the stripe of better than lambda /25 can be obtained.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:5 ,  Issue: 8 )