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Multiple-quantum-well GaInAs/GaInAsP tapered broad-area amplifiers with monolithically integrated waveguide lens for high-power applications

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5 Author(s)
Koyama, F. ; AT&T Bell Lab., Holmdel, NJ, USA ; Liou, K.Y. ; Dentai, A.G. ; Tanbun-Ek, T.
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A 1.48- mu m tapered broad-area semiconductor laser amplifier with a monolithically integrated waveguide lens as demonstrated. The gain saturation characteristics of the tapered amplifier were examined. A maximum output power of 300 mW and a 3-dB saturation power of 200 mW under quasi-CW conditions were obtained from the amplifier without the waveguide lens. Output power of 200 mW was obtained with a broad emission spectrum of approximately 30 nm when the device was used as a superluminescent diode. The amplified output was focused to a single lobe by the monolithically integrated aspheric waveguide lens, which may be useful for efficient coupling of the output into a single-mode fiber.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:5 ,  Issue: 8 )