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High-performance monolithic pin-MODFET transimpedance photoreceiver

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5 Author(s)
A. L. Gutierrez-Aitken ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; P. Bhattcharya ; Y. C. Chen ; D. Pavlidis
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The performance characteristics of a transimpedance photoreceiver using a In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode integrated with a 0.1- mu m-gate-length regrown pseudomorphic In/sub 0.60/Ga/sub 0.40/As MODFET grown by MBE have been investigated. The regrown MODFETs have extrinsic transconductance values as high as 610 mS/mm and channel currents up to 350 mA/mm at a drain bias of 1.5 V. The measured temporal response of the photoreceiver exhibits a FWHM value of 90 ps, which indicates a bandwidth of approximately 6 GHz and expected 10-Gb/s operation. The transimpedance gain was as high as 55 dB- Omega with an 800- Omega feedback resistor.<>

Published in:

IEEE Photonics Technology Letters  (Volume:5 ,  Issue: 8 )