By Topic

High-performance large-area InGaAs metal-semiconductor-metal photodetectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Hieronymi, F. ; Inst. fuer Festkoperphys. I, Tech. Univ. Berlin, Germany ; Bottcher, E.H. ; Droge, E. ; Kuhl, D.
more authors

The fabrication and characteristics of high-performance large-area InP:Fe/InGaAs:Fe/InP:Fe metal-semiconductor-metal (MSM) photodetectors are reported. With a 350- mu m*350- mu m active area, the detectors offer 900-MHz electrical bandwidth and 1.7-pF capacitance at 10-V bias. The respective dark current density is 20 pA/ mu m/sup 2/, an the CW responsivity is 0.4 A/W at 1.3- mu m wavelength. The detectors are therefore ideally suited for applications in the long-wavelength range that require a large detection area and, at the same time, a high bandwidth and low capacitance.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:5 ,  Issue: 8 )