By Topic

Optical properties of reactive ion etched corner reflector strained-layer InGaAs-GaAs-AlGaAs quantum-well lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Smith, G.M. ; Microelectron. Lab., Illinois Univ., Urbana, IL, USA ; Forbes, D.V. ; Coleman, J.J. ; Verdeyen, J.T.

The optical properties of strained-layer InGaAs-GaAs-AlGaAs quantum-well lasers with a cavity comprised of a single cleaved facet and a dry etched corner reflector (CR) is described. For comparison, these data are contrasted with data for Fabry-Perot lasers made from the same material and having either two cleaved facets or one cleaved and one straight-etched facet. The etched CR exhibits higher overall reflectivity than the straight-etched and cleaved facet structures, resulting in lower threshold current density and higher efficiency. However, near-field measurements indicate that improvement in reflectivity from the etched CRs is offset by their tendency to favor off-order transverse modes.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:5 ,  Issue: 8 )