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Model-based emissivity correction in pyrometer temperature control of rapid thermal processing systems

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2 Author(s)
F. Y. Sorrell ; North Carolina State Univ., Raleigh, NC, USA ; R. S. Gyurcsik

Single-wavelength pyrometers are most often used to infer wafer temperature in rapid-thermal-processing (RTP) systems. A constant wafer emissivity is assumed with a pyrometer, but a variation in the wafer's surface emissivity can result in an error in the inferred temperature which affects the temperature control of the RTP system. A time-dependent variation is evident in rapid thermal chemical vapor deposition where the emissivity is a function of the film type and thickness. An approach which uses a physically based model of the emissivity variation as part of the feedback control loop is described. The technique employs a first-order model of the emissivity as a function of film thickness from which a projected actual wafer temperature is inferred. The film thickness is approximated using a valid growth-rate expression and temperature as a function of time. These models are then incorporated into the feedback loop of the RTP control system

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:6 ,  Issue: 3 )