Referenced Items are not available for this document.
A proposed state-of-the-art 1-25 GHz, vacuum field emitter triode (FET) distributed amplifier (DA) of 9+or-1 dB maximum gain has been tested in a Touchstone computer simulation. Theoretical analysis reveals that the vacuum FET DA's gain-bandwidth product is limited primarily by microstripline metal interconnect losses and by low device f/sub T/ values, but surprisingly not by the internal device losses. The results suggest that a vacuum FET DA with low loss microstripline interconnect and high device f/sub T/ values is potentially of exceptionally high gain-bandwidth product. An investigation of device enhancement for high-frequency operation compares the relative merits of a lower emitter work function and a greater electric field enhancement factor beta =E/V/sub gc/.<
Published in:
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Date of Conference: 9-12 Dec. 1990
- Page(s):
- 171 - 174
- Meeting Date :
- 09 Dec 1990-12 Dec 1990
- ISSN :
- 0163-1918
- INSPEC Accession Number:
- 4127177
- Conference Location :
- San Francisco, CA, USA
- Digital Object Identifier :
- 10.1109/IEDM.1990.237200
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
