By Topic

Self-gettering and proximity gettering for buried layer formation by MeV ion implantation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
T. Kuroi ; Mitsubishi Electr. Corp., Hyogo, Japan ; S. Komori ; H. Miyatake ; K. Tsukamoto

The authors studied the characteristics of the junction leakage current of diodes having a buried layer formed by high-energy boron, phosphorus, and arsenic implantation. A remarkable decrease in junction leakage current to the level comparable to that without a buried layer was observed with doses of over 3*10/sup 14/ ions/cm/sup 2/ (self-gettering). The effects of additional high-energy carbon, oxygen, and fluorine implantation on the buried layer were also investigated. A strong gettering effect in reducing the leakage current of the diode was found (proximity gettering). The gettering by secondary defects induced by high-energy ion implantation is found to be a major cause of these phenomena.<>

Published in:

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Date of Conference:

9-12 Dec. 1990